This N-channel superjunction MOSFET is rated for 600 V drain-source voltage and 6 A continuous drain current, with a 16 A pulsed current capability. It uses the CoolMOS™ P7 platform to combine low gate charge and low stored energy in COSS for efficient hard-switching and resonant topologies. The device is housed in a fully insulated TO-220 FullPAK through-hole package with 3 pins, a maximum power dissipation of 21 W, and thermal resistance values of 5.98 K/W junction-to-case and 62 K/W junction-to-ambient. It operates from -40 °C to 150 °C, offers up to 600 mΩ RDS(on) at 10 V, and includes an integrated gate resistor.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPA60R600P7S datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Drain current (continuous) | 6A |
| Drain current (continuous) at 25°C | 6A |
| Pulsed drain current | 16A |
| Drain-source voltage | 600V |
| Drain-source on-resistance max at 10 V | 600mΩ |
| Gate charge typical at 10 V | 9nC |
| Gate-drain charge | 3nC |
| Power dissipation max | 21W |
| Operating temperature range | -40 to 150°C |
| Thermal resistance junction-to-ambient max | 62K/W |
| Thermal resistance junction-to-case max | 5.98K/W |
| Gate threshold voltage range | 3 to 4V |
| Gate threshold voltage typical | 3.5V |
| Mounting | THT |
| Package | TO-220 FullPAK |
| Pin count | 3Pins |
| Polarity | N |
| Special features | Price-performance |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Infineon IPA60R600P7S to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
