This N-channel power MOSFET is rated for 600 V drain-source voltage and 40 A continuous drain current. It uses Infineon CoolMOS™ CFD7 superjunction technology with an integrated fast recovery diode and is offered in the ThinPAK 8x8 surface-mount package. The device specifies 60 mΩ RDS(on), 79 nC gate charge, and 219 W power dissipation. It is designed for operation from -40 °C to 150 °C and supports high-efficiency hard-switching and resonant power topologies.
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| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
These are design resources that include the Infineon IPL60R060CFD7
1400W DC-DC converter (400V to 12V) using CoolMOS CFD7 and OptiMOS 5 in a phase-shift full-bridge topology for server applications with 97% peak efficiency.
