This N-channel power MOSFET is rated for 600 V drain-source voltage and 33 A continuous drain current. It uses the CoolMOS™ CFD7 technology and integrates a fast recovery diode for high-efficiency power conversion topologies. The device offers a maximum RDS(on) of 75 mΩ at 10 V, typical total gate charge of 67 nC, and typical gate-drain charge of 23 nC. It is supplied in a Thin-PAK 8x8 surface-mount package with 5 pins and operates over a junction temperature range from -40 °C to 150 °C. Maximum power dissipation is 189 W, with thermal resistance of 0.66 K/W junction-to-case and 62 K/W junction-to-ambient.
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| Drain-Source Voltage | 600V |
| Continuous Drain Current | 33A |
| Pulsed Drain Current | 129A |
| On-Resistance RDS(on) Max @ 10V | 75mΩ |
| Total Power Dissipation Max | 189W |
| Total Gate Charge Typ @ 10V | 67nC |
| Gate-Drain Charge | 23nC |
| Input Capacitance | 2721pF |
| Output Capacitance | 53pF |
| Gate Threshold Voltage Range | 3.5 to 4.5V |
| Operating Temperature Range | -40 to 150°C |
| Thermal Resistance Junction-to-Case Max | 0.66K/W |
| Thermal Resistance Junction-to-Ambient Max | 62K/W |
| Mounting | SMT |
| Package | Thin-PAK 8x8 |
| Pin Count | 5 |
| Special Features | Fast recovery diode |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
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