This N-channel power MOSFET is rated for 600 V drain-source voltage and 22 A continuous drain current. It provides a maximum RDS(on) of 115 mΩ, a typical total gate charge of 42 nC at 10 V, and a pulsed drain current rating of 79 A. The device is offered in the Thin-PAK 8x8 surface-mount package with 5 pins and includes a fast recovery diode. It operates over a junction temperature range of -40 °C to 150 °C and is listed as RoHS compliant.
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| Drain-Source Voltage Max | 600V |
| Continuous Drain Current Max | 22A |
| Pulsed Drain Current Max | 79A |
| Drain-Source On-Resistance Max @ 25°C | 115mΩ |
| Drain-Source On-Resistance Max @ 10V | 115mΩ |
| Total Power Dissipation Max | 124W |
| Total Gate Charge Typ @ 10V | 42nC |
| Gate Threshold Voltage Range | 3.5 to 4.5V |
| Gate Threshold Voltage Typ | 4V |
| Operating Temperature Range | -40 to 150°C |
| Mounting | SMT |
| Package | Thin-PAK 8x8 |
| Pin Count | 5Pins |
| Polarity | N |
| Special Features | Fast recovery diode |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead-free | No |
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