600 V CoolMOS CFD7 N-channel superjunction MOSFET integrates an ultra-fast body diode for resonant high-power topologies. The device is rated for 18 A continuous drain current, 66 A pulsed drain current, and 106 W total power dissipation. On-resistance is 140 mΩ maximum at 10 V gate drive, and total gate charge is 35 nC typical at 10 V. Surface-mount Thin-PAK 8x8 packaging uses the PG-VSON-4 package family with 5 pins and tape-and-reel packing. The operating temperature range is -40 °C to 150 °C, and the orderable part is RoHS compliant and halogen free.
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| Transistor Type | N-channel power MOSFET |
| Technology | CoolMOS CFD7 superjunction |
| Drain-Source Voltage | 600V |
| Continuous Drain Current | 18A |
| Continuous Drain Current at 25°C | 18A |
| Pulsed Drain Current | 66A |
| Drain-Source On-Resistance Max at 10 V | 140mΩ |
| Total Gate Charge Typ at 10 V | 35nC |
| Gate Threshold Voltage Range | 3.5 to 4.5V |
| Gate Threshold Voltage Typ | 4V |
| Total Power Dissipation Max | 106W |
| Operating Temperature Range | -40 to 150°C |
| Mounting | SMT |
| Package | Thin-PAK 8x8 |
| Infineon Package | PG-VSON-4 |
| Pin Count | 5pins |
| Special Feature | Fast recovery diode |
| Moisture Sensitivity Level | MSL 2a |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead Free | No |
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