N-channel superjunction power MOSFET uses CoolMOS CFD7 technology with an integrated fast body diode for resonant soft-switching power stages. The device is rated for 600 V drain-source breakdown voltage and 12 A continuous drain current at 25 °C case temperature. Maximum on-resistance is 225 mΩ at 10 V gate drive and 25 °C, with 23 nC typical total gate charge. The PG-VSON-4 ThinPAK 8x8 package supports compact high-power SMPS designs for server, telecom, and EV charging applications. Operation is specified from -40 °C to 150 °C junction temperature.
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| Transistor polarity | N-channel |
| Technology | Superjunction MOSFET, CoolMOS CFD7 |
| Drain-source breakdown voltage | 600 minV |
| Drain-source voltage at maximum junction temperature | 650V |
| Continuous drain current at 25 °C case | 12A |
| Continuous drain current at 100 °C case | 8A |
| Pulsed drain current | 42A |
| Maximum on-state resistance | 225mΩ |
| Typical on-state resistance | 189mΩ |
| Gate threshold voltage | 3.5 to 4.5V |
| Total gate charge | 23 typnC |
| Input capacitance | 1015 typpF |
| Output capacitance | 18 typpF |
| Power dissipation at 25 °C case | 68W |
| Junction temperature range | -40 to 150°C |
| Junction-to-case thermal resistance | 1.84 max°C/W |
| Reverse recovery time | 92 typ, 138 maxns |
| Reverse recovery charge | 0.385 typ, 0.77 maxµC |
| Body diode commutation speed | 1300 maxA/µs |
| Package marking | 60R225F7 |
These are design resources that include the Infineon IPL60R225CFD7
1400W DC-DC converter (400V to 12V) using CoolMOS CFD7 and OptiMOS 5 in a phase-shift full-bridge topology for server applications with 97% peak efficiency.
