Power Field-Effect Transistor, 21.3A I(D), 650V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, VSON-4
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| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
These are design resources that include the Infineon IPL65R165CFD
1400W DC-DC converter (400V to 12V) using CoolMOS CFD7 and OptiMOS 5 in a phase-shift full-bridge topology for server applications with 97% peak efficiency.