Parallel NOR flash memory provides 1 Gbit density with 3.0 V-only read, program, and erase operation. The device uses 90 nm MirrorBit technology and supports page-mode reads with 25 ns page access and 110 ns random access for this speed grade. It supports byte or word bus operation, uniform 64 Kword sectors, a 32-word write buffer, and industrial temperature operation from -40°C to 85°C. The orderable configuration uses a Pb-free 56-pin TSOP standard pinout package with VersatileIO operation from 1.65 V to VCC.
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| Memory Type | NOR Flash |
| Memory Density | 1 Gbitbit |
| Technology | 90 nm MirrorBit |
| Supply Voltage | 2.7 to 3.6V |
| I/O Supply Voltage | 1.65 to VCCV |
| Random Access Time | 110ns |
| Page Access Time | 25ns |
| Bus Width | 8 or 16bit |
| Write Buffer Size | 32word |
| Sector Size | 64Kword |
| Operating Temperature | -40 to 85°C |
| Package | 56-pin Thin Small Outline Package |
| Package Dimensions | 14 x 20mm |
| Single Word Programming Time | 60 typicalµs |
| Sector Erase Time | 0.5 typicals |
| Standby Current | 1 typicalµA |
| Lead Free | Pb-free package material set |
These are design resources that include the Infineon S29GL01GP11TFIV10
Comprehensive user guide for the NXP T2080RDB-PC reference design board, detailing its architecture, T2080 processor features, SerDes configurations, and power systems.
