N-Channel MOSFET, 100V Drain-Source Voltage, 36A Continuous Drain Current, and 26.5mΩ Max On-State Resistance. This silicon Metal-Oxide Semiconductor FET features a TO-220AB package for through-hole mounting, a maximum power dissipation of 92W, and operates from -55°C to 175°C. It includes a 15ns turn-on delay and 43ns turn-off delay, with a nominal gate-source voltage of 4V and a maximum gate-source voltage of 20V. This RoHS compliant component offers 1.77nF input capacitance.
PackageTO-220AB
Current Rating36A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF540ZPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
36A
Current Rating
36A
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
26.5MR
Dual Supply Voltage
100V
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
1.77nF
Lead Free
Lead Free
Length
10.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
92W
Mount
Through Hole
Nominal Vgs
4V
On-State Resistance
26.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
43ns
Turn-On Delay Time
15ns
DC Rated Voltage
100V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF540ZPBF Datasheet
Download the complete datasheet for International Rectifier IRF540ZPBF to view detailed technical specifications.
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