The AUIRFR2607ZTRR is a high-power N-channel HEXFET power MOSFET from International Rectifier. It features a maximum operating temperature range of -55°C to 175°C and a maximum power dissipation of 110W. The device has a drain to source breakdown voltage of 75V and a continuous drain current of 45A. It also has a low drain to source resistance of 22mR and a fast switching time with a fall time of 28ns and a turn-off delay time of 39ns.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power110W
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Technical Specifications
International Rectifier AUIRFR2607ZTRR technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 45A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.44nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 22mR |
| Series | HEXFET® |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRFR2607ZTRR Datasheet
Download the complete datasheet for International Rectifier AUIRFR2607ZTRR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.