The AUIRFR5410TR is a P-channel HEXFET power MOSFET from International Rectifier, featuring a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 66W and a continuous drain current of 13A. The device has a drain to source breakdown voltage of 100V and a drain to source resistance of 205mR. It is packaged in a DPAK surface mount package and is RoHS compliant.
PackageDPAK
MountingSurface Mount
PolarityP-CHANNEL
Power66W
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Technical Specifications
International Rectifier AUIRFR5410TR technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 205mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 205MR |
| Fall Time | 46ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 760pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 66W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 66W |
| Radiation Hardening | No |
| Rds On Max | 205mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRFR5410TR Datasheet
Download the complete datasheet for International Rectifier AUIRFR5410TR to view detailed technical specifications.
No datasheet is available for this part.