The BSO203PH is a surface mount N and P-Channel FET from International Rectifier, featuring a maximum drain to source voltage of 100V and continuous drain current of 1.5A. It has a maximum power dissipation of 2W and an input capacitance of 380pF. The device is packaged in SOIC and is available on tape and reel. It is part of the HEXFET series.
PackageSOIC
MountingSurface Mount
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Technical Specifications
International Rectifier BSO203PH technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Voltage (Vdss) | 100V |
| FET Type | N and P-Channel |
| Input Capacitance | 380pF |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 210mR |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier BSO203PH Datasheet
Download the complete datasheet for International Rectifier BSO203PH to view detailed technical specifications.
No datasheet is available for this part.