The IPS022G is a dual N-channel MOSFET from International Rectifier, packaged in a surface mount SOIC package. It can handle a maximum output current of 1A per channel and has an on-state resistance of 130mR. The device operates within a temperature range of -40°C to 150°C and can dissipate up to 1W of power. It is not RoHS compliant and is not radiation hardened.
PackageSOIC
Current10mA
MountingSurface Mount
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Technical Specifications
International Rectifier IPS022G technical specifications.
General
| Package/Case | SOIC |
| Fall Time | 1.3us |
| Height | 1.5mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 10A |
| Max Power Dissipation | 1W |
| Max Supply Voltage | 6V |
| Min Supply Voltage | 4V |
| Mount | Surface Mount |
| Number of Outputs | 2 |
| On-State Resistance | 130mR |
| Output Current | 1A |
| Output Current per Channel | 1A |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rated Current-Max | 1A |
| RoHS Compliant | No |
| Supply Current | 10mA |
| Width | 4mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IPS022G Datasheet
Download the complete datasheet for International Rectifier IPS022G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.