The IPS1052GPBF is a dual N-channel MOSFET from International Rectifier with a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. It has a clamping voltage of 39V and a drain to source voltage of 36V. The device is packaged in a SOIC package and is suitable for surface mount applications. The MOSFET has a maximum power dissipation of 1.25W and an on-state resistance of 160mR. It is RoHS compliant and has a nominal Vgs of 1.7V.
PackageSOIC
Voltage5.5V
MountingSurface Mount
Power1.25W
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Technical Specifications
International Rectifier IPS1052GPBF technical specifications.
General
| Package/Case | SOIC |
| Clamping Voltage | 39V |
| Continuous Drain Current (ID) | 1.1A |
| Drain to Source Voltage (Vdss) | 36V |
| Fall Time | 4us |
| Height | 1.5mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.25W |
| Max Supply Voltage | 5.5V |
| Min Supply Voltage | 4.5V |
| Mount | Surface Mount |
| Nominal Vgs | 1.7V |
| Number of Outputs | 2 |
| On-State Resistance | 160mR |
| Operating Supply Voltage | 36V |
| Output Current | 500mA |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Voltage | 5.5V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IPS1052GPBF Datasheet
Download the complete datasheet for International Rectifier IPS1052GPBF to view detailed technical specifications.
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