The IRF5803D2HR is a surface mount power MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 3.4A and a gate to source voltage of 20V. The device features a fall time of 50ns and turn-off delay times of 88ns. It is packaged in a SOIC package and is available in rail/Tube packaging.
PackageSOIC
MountingSurface Mount
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Technical Specifications
International Rectifier IRF5803D2HR technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.4A |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Turn-Off Delay Time | 88ns |
| Turn-On Delay Time | 43ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IRF5803D2HR Datasheet
Download the complete datasheet for International Rectifier IRF5803D2HR to view detailed technical specifications.
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