The IRF6607TR1 is a surface mount N-channel HEXFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. It has a maximum power dissipation of 3.6W and a continuous drain current of 27A. The device is RoHS compliant and has a threshold voltage of 2V.
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRF6607TR1 technical specifications.
General
| Continuous Drain Current (ID) | 27A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 6.93nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.6W |
| Radiation Hardening | No |
| Rds On Max | 3.3mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 60ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6607TR1 Datasheet
Download the complete datasheet for International Rectifier IRF6607TR1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.