International Rectifier
IRF6607TR1
INTERNATIONAL RECTIFIER IRF6607TR1 MOSFET Transistor, N Channel, 95 A, 30 V, 0.0025 ohm, 10 V, 2 V
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRF6607TR1 technical specifications.
General
Continuous Drain Current (ID)
27A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
3.3mR
Drain to Source Voltage (Vdss)
30V
Fall Time
13ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
6.93nF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
3.6W
Mount
Surface Mount
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.6W
Radiation Hardening
No
Rds On Max
3.3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
2V
Turn-Off Delay Time
32ns
Turn-On Delay Time
60ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6607TR1 Datasheet
Download the complete datasheet for International Rectifier IRF6607TR1 to view detailed technical specifications.
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