The IRF6611TR1 is a surface mount N-CHANNEL HEXFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. It has a maximum power dissipation of 3.9W and a drain to source breakdown voltage of 30V. The device is RoHS compliant and lead free, with a nominal Vgs of 2.25V and a threshold voltage of 2.25V.
Current Rating27A
MountingSurface Mount
PolarityN-CHANNEL
Power3.9W
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Technical Specifications
International Rectifier IRF6611TR1 technical specifications.
General
| Continuous Drain Current (ID) | 32A |
| Current Rating | 27A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Fall Time | 6.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.86nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 3.9W |
| Mount | Surface Mount |
| Nominal Vgs | 2.25V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.9W |
| Rds On Max | 2.6mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 24ns |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 2.25V |
| Turn-Off Delay Time | 24ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6611TR1 Datasheet
Download the complete datasheet for International Rectifier IRF6611TR1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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