The IRF6619TR1PBF is a surface mount N-CHANNEL HEXFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. It has a continuous drain current of 30A and a drain to source breakdown voltage of 20V. The device is RoHS compliant and has a nominal Vgs of 1.55V. It is part of the HEXFET Series and is available in a tape and reel packaging with a package quantity of 1000.
Current Rating30A
MountingSurface Mount
PolarityN-CHANNEL
Power89W
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Technical Specifications
International Rectifier IRF6619TR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 30A |
| Current Rating | 30A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 3mR |
| Drain to Source Voltage (Vdss) | 20V |
| Dual Supply Voltage | 20V |
| Fall Time | 9.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.506mm |
| Input Capacitance | 5.04nF |
| Lead Free | Lead Free |
| Length | 6.35mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8mW |
| Mount | Surface Mount |
| Nominal Vgs | 1.55V |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Termination | SMD/SMT |
| Threshold Voltage | 1.55V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 21ns |
| DC Rated Voltage | 20V |
| Width | 5.05mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6619TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6619TR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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