IRF6629TR1PBF

INTERNATIONAL RECTIFIER IRF6629TR1PBF MOSFET Transistor, N Channel, 29 A, 25 V, 0.0016 ohm, 10 V, 1.8 V

MountingSurface Mount

PolarityN-CHANNEL

Power100W

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International Rectifier IRF6629TR1PBF technical specifications.

Continuous Drain Current (ID)	29A
Drain to Source Breakdown Voltage	25V
Drain to Source Resistance	2.7mR
Drain to Source Voltage (Vdss)	25V
Drain-source On Resistance-Max	2.1MR
Dual Supply Voltage	25V
Fall Time	7.4ns
Gate to Source Voltage (Vgs)	20V
Height	0.506mm
Input Capacitance	4.26nF
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Max Power Dissipation	2.8W
Mount	Surface Mount
Nominal Vgs	1.8V
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	100W
Radiation Hardening	No
Rds On Max	2.1mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	HEXFET®
Termination	SMD/SMT
Threshold Voltage	1.8V
Turn-Off Delay Time	20ns
Turn-On Delay Time	20ns
Width	5.05mm