International Rectifier
IRF6633ATRPBF
A 20V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET MP PACKAGE RATED AT 69
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF6633ATRPBF technical specifications.
General
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 9.4mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 7.7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.7mm |
| Input Capacitance | 1.41nF |
| Length | 6.35mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.3W |
| Mount | Surface Mount |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Radiation Hardening | No |
| Rds On Max | 5.6mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 8.4ns |
| Turn-On Delay Time | 6.9ns |
| Width | 5.05mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6633ATRPBF Datasheet
Download the complete datasheet for International Rectifier IRF6633ATRPBF to view detailed technical specifications.
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