
The IRF6635TRPBF is a 30V 32A N-CHANNEL HEXFET power MOSFET from International Rectifier. It features a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. The device has a maximum power dissipation of 2.8W and is packaged in a tape and reel format for surface mount applications. The IRF6635TRPBF is RoHS compliant and has a nominal Vgs of 1.8V. It is suitable for use in a variety of applications including power supplies and motor control circuits.
International Rectifier IRF6635TRPBF technical specifications.
| Continuous Drain Current (ID) | 32A |
| Current Rating | 32A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 2.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 1.8MR |
| Fall Time | 8.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.97nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Radiation Hardening | No |
| Rds On Max | 1.8mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 21ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF6635TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
