The IRF6644 is a N-CHANNEL HEXFET with a drain to source breakdown voltage of 100V and a continuous drain current of 10.3A. It has a maximum power dissipation of 2.8W and is designed for surface mount applications. The device operates over a temperature range of -40°C to 150°C and is RoHS compliant. The IRF6644 has a nominal Vgs of 4.8V and a maximum Rds On of 13mR.
MountingSurface Mount
PolarityN-CHANNEL
Power2.8W
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Technical Specifications
International Rectifier IRF6644 technical specifications.
General
| Continuous Drain Current (ID) | 10.3A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.21nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 4.8V |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.8W |
| Radiation Hardening | No |
| Rds On Max | 13mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 17ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6644 Datasheet
Download the complete datasheet for International Rectifier IRF6644 to view detailed technical specifications.
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