The IRF6691TR1 is a surface mount N-CHANNEL HEXFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. It has a maximum power dissipation of 2.8W and a continuous drain current of 32A. The device is RoHS compliant and has a nominal Vgs of 2.5V. It is suitable for use in a variety of applications including power management and switching circuits.
MountingSurface Mount
PolarityN-CHANNEL
Power2.8W
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Technical Specifications
International Rectifier IRF6691TR1 technical specifications.
General
| Continuous Drain Current (ID) | 32A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Voltage (Vdss) | 20V |
| Dual Supply Voltage | 20V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 6.58nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 2.5V |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.8W |
| Radiation Hardening | No |
| Rds On Max | 1.8mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 32ns |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 23ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6691TR1 Datasheet
Download the complete datasheet for International Rectifier IRF6691TR1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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