International Rectifier
IRF6708S2TR1PBF
INTERNATIONAL RECTIFIER IRF6708S2TR1PBF MOSFET Transistor, N Channel, 36 A, 30 V, 0.0075 ohm, 10 V, 1.8 V
MountingSurface Mount
PolarityN-CHANNEL
Power20W
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Technical Specifications
International Rectifier IRF6708S2TR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 36A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 14.3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.49mm |
| Input Capacitance | 1.01nF |
| Length | 3.95mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 20W |
| Radiation Hardening | No |
| Rds On Max | 8.9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 9.1ns |
| Width | 3.95mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6708S2TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6708S2TR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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