International Rectifier
IRF6711STR1PBF
INTERNATIONAL RECTIFIER IRF6711STR1PBF N CHANNEL, MOSFET, 25V, 19A, DIRECTFET
MountingSurface Mount
PolarityN-CHANNEL
Power42W
Quick Jump:
Technical Specifications
International Rectifier IRF6711STR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 19A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 6.5mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 5.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.506mm |
| Input Capacitance | 1.81nF |
| Length | 4.85mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.2W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Radiation Hardening | No |
| Rds On Max | 3.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 7.1ns |
| Turn-On Delay Time | 7.7ns |
| Width | 3.95mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6711STR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6711STR1PBF to view detailed technical specifications.
No datasheet is available for this part.
Product Images
