International Rectifier
IRF6713STR1PBF
INTERNATIONAL RECTIFIER IRF6713STR1PBF MOSFET Transistor, N Channel, 22 A, 25 V, 0.0022 ohm, 10 V, 1.9 V
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF6713STR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 4.6mR |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 3MR |
| Dual Supply Voltage | 25V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.59mm |
| Input Capacitance | 2.88nF |
| Lead Free | Lead Free |
| Length | 3.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.2W |
| Mount | Surface Mount |
| Nominal Vgs | 1.9V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Radiation Hardening | No |
| Rds On Max | 3mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 1.9V |
| Turn-Off Delay Time | 9.2ns |
| Turn-On Delay Time | 12ns |
| Width | 3.95mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6713STR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6713STR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.