International Rectifier
IRF6718L2TR1PBF
INTERNATIONAL RECTIFIER IRF6718L2TR1PBF MOSFET Transistor, N Channel, 61 A, 25 V, 0.0005 ohm, 10 V, 1.9 V
PackageL
MountingSurface Mount
PolarityN-CHANNEL
Power83W
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Technical Specifications
International Rectifier IRF6718L2TR1PBF technical specifications.
General
Package/Case
L
Continuous Drain Current (ID)
61A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
1.4mR
Drain to Source Voltage (Vdss)
25V
Drain-source On Resistance-Max
500kR
Dual Supply Voltage
25V
Fall Time
53ns
Gate to Source Voltage (Vgs)
20V
Height
0.496mm
Input Capacitance
6.5nF
Lead Free
Lead Free
Length
9.15mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
4.3W
Mount
Surface Mount
Nominal Vgs
1.9V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
83W
Radiation Hardening
No
Rds On Max
0.7mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Threshold Voltage
1.9V
Turn-Off Delay Time
47ns
Turn-On Delay Time
67ns
Width
7.1mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6718L2TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6718L2TR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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