International Rectifier
IRF6720S2TR1PBF
INTERNATIONAL RECTIFIER IRF6720S2TR1PBF MOSFET Transistor, N Channel, 11 A, 30 V, 0.006 ohm, 10 V, 1.9 V
PackageS
MountingSurface Mount
PolarityN-CHANNEL
Power17W
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Technical Specifications
International Rectifier IRF6720S2TR1PBF technical specifications.
General
Package/Case
S
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
12.8mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
8MR
Dual Supply Voltage
30V
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Height
0.66mm
Input Capacitance
1.14nF
Lead Free
Lead Free
Length
3.95mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.7W
Mount
Surface Mount
Nominal Vgs
2V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
17W
Radiation Hardening
No
Rds On Max
8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Threshold Voltage
1.9V
Turn-Off Delay Time
11ns
Turn-On Delay Time
13ns
Width
3.95mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6720S2TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6720S2TR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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