International Rectifier
IRF6721STR1PBF
INTERNATIONAL RECTIFIER IRF6721STR1PBF MOSFET Transistor, N Channel, 14 A, 30 V, 0.0051 ohm, 10 V, 1.9 V
MountingSurface Mount
PolarityN-CHANNEL
Power2.2W
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Technical Specifications
International Rectifier IRF6721STR1PBF technical specifications.
General
Continuous Drain Current (ID)
14A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
10.9mR
Drain to Source Voltage (Vdss)
30V
Fall Time
5.3ns
Gate to Source Voltage (Vgs)
20V
Height
0.62mm
Input Capacitance
1.43nF
Length
4.85mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.2W
Mount
Surface Mount
Nominal Vgs
1.9V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.2W
Radiation Hardening
No
Rds On Max
7.3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
1.9V
Turn-Off Delay Time
9.3ns
Turn-On Delay Time
7.8ns
Width
3.95mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6721STR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6721STR1PBF to view detailed technical specifications.
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