International Rectifier
IRF6729MTR1PBF
INTERNATIONAL RECTIFIER IRF6729MTR1PBF MOSFET Transistor, N Channel, 190 A, 30 V, 1.4 mohm, 10 V, 1.8 V
MountingSurface Mount
PolarityN-CHANNEL
Power2.8W
Quick Jump:
Technical Specifications
International Rectifier IRF6729MTR1PBF technical specifications.
General
Continuous Drain Current (ID)
31A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
2.7mR
Drain to Source Voltage (Vdss)
30V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
0.506mm
Input Capacitance
6.03nF
Length
6.35mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
104W
Mount
Surface Mount
Nominal Vgs
1.8V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.8W
Radiation Hardening
No
Rds On Max
1.8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
1.8V
Turn-Off Delay Time
20ns
Turn-On Delay Time
22ns
Width
5.05mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6729MTR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6729MTR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.