The IRF6811STR1PBF is a single N-channel HEXFET MOSFET from International Rectifier with a maximum operating temperature range of -40°C to 150°C. It has a maximum drain current rating of 74A and a maximum drain to source breakdown voltage of 25V. The device features a maximum drain to source resistance of 5.4 milliohms and a maximum power dissipation of 2.1 watts. It is packaged in a surface mount package and is lead free and RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power32W
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Technical Specifications
International Rectifier IRF6811STR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 74A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 5.4mR |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 3.7MR |
| Fall Time | 5.5ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 1.59nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 32W |
| Radiation Hardening | No |
| Rds On Max | 3.7mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 8.7ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6811STR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6811STR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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