The IRF7316GTRPBF is a P-channel HEXFET MOSFET from International Rectifier, featuring a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 2W and a continuous drain current of 4.9A. The device is packaged in a SOIC package and is suitable for surface mount applications.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
International Rectifier IRF7316GTRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.9A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 58mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 48ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 710pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 58mR |
| Series | HEXFET® |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 13ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7316GTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7316GTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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