PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF7379PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Fall Time | 18ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 520pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Elements | 2 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 45mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 25ns |
| Width | 4.05mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7379PBF Datasheet
Download the complete datasheet for International Rectifier IRF7379PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.