
International Rectifier IRF7433.PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.9A |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 12V |
| Dual Supply Voltage | -12V |
| Fall Time | 175ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.5mm |
| Input Capacitance | 1.877nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -900mV |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Series | HEXFET® Series |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 272ns |
| Turn-On Delay Time | 8.8ns |
| Width | 4.05mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7433.PBF to view detailed technical specifications.
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