IRF7471PBF

INTERNATIONAL RECTIFIER IRF7471PBF MOSFET Transistor, N Channel, 10 A, 40 V, 13 mohm, 10 V, 3 V

PackageSOIC

MountingSurface Mount

PolarityN-CHANNEL

Power2.5W

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International Rectifier IRF7471PBF technical specifications.

Package/Case	SOIC
Continuous Drain Current (ID)	10A
Drain to Source Breakdown Voltage	40V
Drain to Source Resistance	16mR
Drain to Source Voltage (Vdss)	40V
Fall Time	4.1ns
Gate to Source Voltage (Vgs)	20V
Height	1.5mm
Input Capacitance	2.82nF
Length	5mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.5W
Mount	Surface Mount
Number of Elements	1
Package Quantity	4085
Packaging	Rail/Tube
Polarity	N-CHANNEL
Polarization	N
Power Dissipation	2.5W
Radiation Hardening	No
Rds On Max	13mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	HEXFET®
Threshold Voltage	3V
Turn-Off Delay Time	15ns
Turn-On Delay Time	12ns
Width	4mm