PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF7475PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 15MR |
| Fall Time | 7.5ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.59nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 15mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 7.5ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7475PBF Datasheet
Download the complete datasheet for International Rectifier IRF7475PBF to view detailed technical specifications.
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