PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power1.8W
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Technical Specifications
International Rectifier IRF7604TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -3.6A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 90mR |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 590pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Nominal Vgs | -700mV |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 17ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7604TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7604TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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