The IRF7750GTRPBF is a P-CHANNEL HEXFET MOSFET with a maximum operating temperature of 150°C and a maximum power dissipation of 1W. It features a continuous drain current of -4.7A and a drain to source breakdown voltage of -20V. The device has a nominal Vgs of -1.2V and an input capacitance of 1.7nF. It is packaged in a TSSOP package and is mounted on the surface. The IRF7750GTRPBF is RoHS compliant and is available on a tape and reel.
PackageTSSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1W
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Technical Specifications
International Rectifier IRF7750GTRPBF technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | -4.7A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.7nF |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Nominal Vgs | -1.2V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 30mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7750GTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7750GTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.