International Rectifier
IRF7811WPBF
INTERNATIONAL RECTIFIER IRF7811WPBF MOSFET Transistor, N Channel, 14 A, 30 V, 9 mohm, 4.5 V, 1 V
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
International Rectifier IRF7811WPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
14A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
12mR
Drain to Source Voltage (Vdss)
30V
Dual Supply Voltage
30V
Fall Time
9.9ns
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Input Capacitance
2.335nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Nominal Vgs
1V
Number of Elements
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
3.1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Row Spacing
6.3mm
Series
HEXFET® Series
Threshold Voltage
1V
Turn-Off Delay Time
29ns
Turn-On Delay Time
11ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7811WPBF Datasheet
Download the complete datasheet for International Rectifier IRF7811WPBF to view detailed technical specifications.
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