PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF7862PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
21A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
4.5mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
3.3MR
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
4.09nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
2.35V
Number of Elements
1
Package Quantity
95
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Threshold Voltage
5.4V
Turn-Off Delay Time
18ns
Turn-On Delay Time
16ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7862PBF Datasheet
Download the complete datasheet for International Rectifier IRF7862PBF to view detailed technical specifications.
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