The IRF7862PBF is a surface mount N-CHANNEL HEXFET MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 2.5W and a maximum drain to source breakdown voltage of 30V. The device features a drain to source on resistance of 3.3mR and a fall time of 11ns. The package is a SOIC with a height of 1.5mm, length of 5mm, and width of 4mm.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF7862PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3.3MR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 4.09nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 2.35V |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Threshold Voltage | 5.4V |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 16ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7862PBF Datasheet
Download the complete datasheet for International Rectifier IRF7862PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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