International Rectifier
IRF8010LPBF
INTERNATIONAL RECTIFIER IRF8010LPBF MOSFET Transistor, N Channel, 80 A, 100 V, 15 mohm, 10 V, 4 V
PackageTO-262
Current Rating80A
MountingThrough Hole
Power260W
Quick Jump:
Technical Specifications
International Rectifier IRF8010LPBF technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 80A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Dual Supply Voltage | 100V |
| Fall Time | 120ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 10.54mm |
| Input Capacitance | 3.83nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 260W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 260W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 61ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF8010LPBF Datasheet
Download the complete datasheet for International Rectifier IRF8010LPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.