PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF8113GTRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 17.2A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 3.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 2.91nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 2.2V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 5.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 13ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF8113GTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF8113GTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.