International Rectifier
IRF9332PBF
INFINEON - IRF9332PBF - Transistor MOSFET, Canale P, -9.8 A, -30 V, 0.0136 ohm, -10 V, -1.9 V
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF9332PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
-9.8A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
28.1mR
Drain to Source Voltage (Vdss)
-30V
Fall Time
58ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.27nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
-1.9V
Number of Elements
1
Package Quantity
95
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
-1.9V
Turn-Off Delay Time
73ns
Turn-On Delay Time
15ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF9332PBF Datasheet
Download the complete datasheet for International Rectifier IRF9332PBF to view detailed technical specifications.
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