The IRF9333PBF is a surface mount P-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current rating of 9.2A and a drain to source breakdown voltage of -30V. The device has a maximum power dissipation of 2.5W and a gate to source voltage of 20V. It is packaged in a SOIC package with dimensions of 1.57mm height, 3.99mm width, and 4.98mm length.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF9333PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9.2A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 32.5mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 49ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.57mm |
| Input Capacitance | 1.11nF |
| Length | 4.98mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -1.8V |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1.8V |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 16ns |
| Width | 3.99mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF9333PBF Datasheet
Download the complete datasheet for International Rectifier IRF9333PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.