
International Rectifier IRF9333TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9.2A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 19.4MR |
| Fall Time | 49ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.11nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -1.8V |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 16ns |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF9333TRPBF to view detailed technical specifications.
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