The IRF9395MTRPBF is a P-channel HEXFET MOSFET with a continuous drain current of 14A and a drain to source breakdown voltage of -30V. It operates at a maximum power dissipation of 2.1W and features an input capacitance of 3.241nF. The device is packaged in a tape and reel format with 4800 units per reel and is RoHS compliant. It is designed for surface mount applications and has a maximum Rds on resistance of 7mR.
MountingSurface Mount
PolarityP-CHANNEL
Power2.1W
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Technical Specifications
International Rectifier IRF9395MTRPBF technical specifications.
General
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.241nF |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.1W |
| Rds On Max | 7mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF9395MTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF9395MTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.