International Rectifier
IRF9953PBF
INTERNATIONAL RECTIFIER IRF9953PBF Dual MOSFET, Dual P Channel, 2.3 A, 30 V, 250 mohm, -10 V, -1 V
PackageSOIC
Current Rating-2.3A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
International Rectifier IRF9953PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
2.3A
Current Rating
-2.3A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
250mR
Drain to Source Voltage (Vdss)
30V
Fall Time
6.9ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
190pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
2
Package Quantity
95
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Threshold Voltage
-1V
Turn-Off Delay Time
20ns
Turn-On Delay Time
9.7ns
DC Rated Voltage
-30V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF9953PBF Datasheet
Download the complete datasheet for International Rectifier IRF9953PBF to view detailed technical specifications.
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