International Rectifier
IRFH5110TRPBF
Single N-Channel 100 V 12.4 mOhm 48 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
PackageQFN
MountingSurface Mount
Power3.6W
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Technical Specifications
International Rectifier IRFH5110TRPBF technical specifications.
General
| Package/Case | QFN |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 12.4MR |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.152nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Power Dissipation | 3.6W |
| Rds On Max | 12.4mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH5110TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFH5110TRPBF to view detailed technical specifications.
No datasheet is available for this part.