PackageQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRFH5210TR2PBF technical specifications.
General
| Package/Case | QFN |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 14.9mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 14.9MR |
| Fall Time | 6.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.85mm |
| Input Capacitance | 2.57nF |
| Length | 6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.6W |
| Radiation Hardening | No |
| Rds On Max | 14.9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 7.2ns |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH5210TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH5210TR2PBF to view detailed technical specifications.
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