The IRFH5215TR2PBF is a surface mount N-channel HEXFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 150V and a continuous drain current of 5A. The device has a maximum power dissipation of 3.6W and is packaged in a lead-free VQFN package. The IRFH5215TR2PBF is RoHS compliant and has a nominal Vgs of 5V.
PackageVQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRFH5215TR2PBF technical specifications.
General
| Package/Case | VQFN |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 58mR |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 58MR |
| Fall Time | 2.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.85mm |
| Input Capacitance | 1.35nF |
| Lead Free | Lead Free |
| Length | 6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Nominal Vgs | 5V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.6W |
| Radiation Hardening | No |
| Rds On Max | 58mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 6.7ns |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH5215TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH5215TR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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